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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA411DJ-T1-GE3
Vishay Siliconix

SIA411DJ-T1-GE3

Manufacturer Part Number SIA411DJ-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 20V 12A PPAK SC70-6
Package PowerPAK® SC-70-6
In Stock 5124 pcs
Data sheet SIL-0632014 16/Apr/2014SiA411DJ
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SC-70-6
Series TrenchFET®
Rds On (Max) @ Id, Vgs 30mOhm @ 5.9A, 4.5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Package / Case PowerPAK® SC-70-6
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 8 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Base Product Number SIA411

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Data sheet

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