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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2312BDS-T1-GE3
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SI2312BDS-T1-GE3

Manufacturer Part Number SI2312BDS-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 20V 3.9A SOT23-3
Package SOT-23-3 (TO-236)
In Stock 475879 pcs
Data sheet Material ComplianceNew Solder Plating Site 18/Apr/2023Si2312BDS
Reference Price (In US Dollars)
1 10 100 500 1000
$0.225 $0.192 $0.143 $0.112 $0.087
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 850mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Power Dissipation (Max) 750mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Base Product Number SI2312

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SI2312BDS-T1-GE3 Datasheet PDF

Data sheet

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