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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2308BDS-T1-GE3
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SI2308BDS-T1-GE3

Manufacturer Part Number SI2308BDS-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 60V 2.3A SOT23-3
Package SOT-23-3 (TO-236)
In Stock 438041 pcs
Data sheet Material ComplianceNew Solder Plating Site 18/Apr/2023
Reference Price (In US Dollars)
1 10 100 500 1000
$0.208 $0.178 $0.133 $0.105 $0.081
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Base Product Number SI2308

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SI2308BDS-T1-GE3 Datasheet PDF

Data sheet

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