SI2309DS-T1-E3
| Manufacturer Part Number | SI2309DS-T1-E3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET P-CH 60V 1.25A SOT23-3 |
| Package | SOT-23-3 (TO-236) |
| In Stock | 6674 pcs |
| Data sheet | Material ComplianceSI2309DS |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 1.25A, 10V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Package | Tape & Reel (TR) |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
| Base Product Number | SI2309 |
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