TPH3212PS
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.6V @ 400uA
Vgs (Max)
±18V
Technology
GaNFET (Cascode Gallium Nitride FET)
Supplier Device Package
TO-220AB
Series
-
Rds On (Max) @ Id, Vgs
72mOhm @ 17A, 8V
Power Dissipation (Max)
104W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Base Product Number
TPH3212
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Data sheet
Datasheet File Browse
