TPH3206LDGB
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.6V @ 500µA
Vgs (Max)
±18V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
PQFN (8x8)
Series
-
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
Power Dissipation (Max)
81W (Tc)
Package / Case
3-PowerDFN
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
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TPH3206LDGB Datasheet PDF
Data sheet
Datasheet File Browse
