TPH3202LD
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±18V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
4-PQFN (8x8)
Series
-
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Power Dissipation (Max)
65W (Tc)
Package / Case
4-PowerDFN
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
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Data sheet
Datasheet File Browse