TK110E65Z,S1X
| Manufacturer Part Number | TK110E65Z,S1X |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | 650V DTMOS VI TO-220 110MOHM |
| Package | TO-220 |
| In Stock | 48284 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 |
|---|---|---|---|---|---|
| $1.604 | $1.441 | $1.181 | $1.005 | $0.848 | $0.805 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 1.02mA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| Power Dissipation (Max) | 190W (Tc) |
| Package / Case | TO-220-3 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
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