TK10A60E,S4X
| Manufacturer Part Number | TK10A60E,S4X |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N-CH 600V TO220SIS |
| Package | TO-220SIS |
| In Stock | 140894 pcs |
| Data sheet | TK10A60E |
Reference Price (In US Dollars)
| 1 | 50 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.682 | $0.547 | $0.478 | $0.371 | $0.293 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220SIS |
| Series | - |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 5A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Other Names | TK10A60E,S4X(S TK10A60E,S5X TK10A60E,S5X(M TK10A60ES4X TK10A60ES4X(S TK10A60ES4X(S-ND TK10A60ES5X TK10A60ES5X-ND |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 10A (Ta) 45W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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