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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK10J80E,S1E
Toshiba Semiconductor and Storage

TK10J80E,S1E

Manufacturer Part Number TK10J80E,S1E
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N-CH 800V 10A TO3P
Package TO-3P(N)
In Stock 85222 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$1.088 $0.979 $0.802 $0.683 $0.576 $0.547 $0.526
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P(N)
Series π-MOSVIII
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-3P-3, SC-65-3
Package Tube
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Base Product Number TK10J80

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TK10J80E,S1E Datasheet PDF