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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2969(TE85L,F)
Toshiba Semiconductor and Storage

RN2969(TE85L,F)

Manufacturer Part Number RN2969(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2PNP PREBIAS 0.2W US6
Package US6
In Stock 1045614 pcs
Data sheet RN2967-69
Reference Price (In US Dollars)
1 10 100 500 1000
$0.187 $0.139 $0.079 $0.052 $0.04
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) 22kOhms
Resistor - Base (R1) 47kOhms
Power - Max 200mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN2969

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RN2969(TE85L,F) Datasheet PDF

Data sheet