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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2961(TE85L,F)
Toshiba Semiconductor and Storage

RN2961(TE85L,F)

Manufacturer Part Number RN2961(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2PNP PREBIAS 0.2W US6
Package US6
In Stock 2111509 pcs
Data sheet
Reference Price (In US Dollars)
3000 6000 15000 30000 75000 150000
$0.033 $0.03 $0.027 $0.025 $0.022 $0.021
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) 4.7kOhms
Resistor - Base (R1) 4.7kOhms
Power - Max 200mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN2961

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RN2961(TE85L,F) Datasheet PDF