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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2911FE(TE85L,F)

Manufacturer Part Number RN2911FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2PNP PREBIAS 0.1W ES6
Package ES6
In Stock 1527308 pcs
Data sheet RN2910FE-11FE
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.131 $0.097 $0.055 $0.036 $0.028 $0.024
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN2911

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RN2911FE(TE85L,F) Datasheet PDF

Data sheet