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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1901,LF(CT
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RN1901,LF(CT

Manufacturer Part Number RN1901,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS 2NPN PREBIAS 0.2W US6
Package US6
In Stock 3074110 pcs
Data sheet RN1901-06Multiple Devices 01/Jul/2014
Reference Price (In US Dollars)
3000 6000 15000 30000 75000 150000
$0.019 $0.017 $0.014 $0.013 $0.012 $0.011
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) 1kOhms
Resistor - Base (R1) 4.7kOhms
Power - Max 200mW
Product Attribute Attribute Value
Package / Case 6-TSSOP, SC-88, SOT-363
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1901

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RN1901,LF(CT Datasheet PDF

Data sheet

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