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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1711JE(TE85L,F)
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RN1711JE(TE85L,F)

Manufacturer Part Number RN1711JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANSISTOR NPN X2 BRT Q1BSR10KOH
Package ESV
In Stock 264755 pcs
Data sheet
Reference Price (In US Dollars)
1
$0.168
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ESV
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-553
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1711

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RN1711JE(TE85L,F) Datasheet PDF