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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1903FE,LXHF(CT
Toshiba Semiconductor and Storage

RN1903FE,LXHF(CT

Manufacturer Part Number RN1903FE,LXHF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
Package ES6
In Stock 967060 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.157 $0.117 $0.073 $0.05 $0.038 $0.034
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 22kOhms
Resistor - Base (R1) 22kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number RN1903

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RN1903FE,LXHF(CT Datasheet PDF