GT30N135SRA,S1E
Manufacturer Part Number | GT30N135SRA,S1E |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | D-IGBT TO-247 VCES=1350V IC=30A |
Package | TO-247 |
In Stock | 52391 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 25 | 100 | 250 | 500 | 1000 | 2500 | 5000 |
---|---|---|---|---|---|---|---|---|
$1.453 | $1.303 | $1.232 | $1.068 | $1.013 | $0.909 | $0.767 | $0.728 | $0.707 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Collector Emitter Breakdown (Max) | 1350 V |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
Test Condition | 300V, 60A, 39Ohm, 15V |
Td (on/off) @ 25°C | - |
Switching Energy | -, 1.3mJ (off) |
Supplier Device Package | TO-247 |
Series | - |
Power - Max | 348 W |
Package / Case | TO-247-3 |
Product Attribute | Attribute Value |
---|---|
Package | Tube |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Input Type | Standard |
IGBT Type | - |
Gate Charge | 270 nC |
Current - Collector Pulsed (Icm) | 120 A |
Current - Collector (Ic) (Max) | 60 A |
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