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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GT30J121(Q)
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GT30J121(Q)

Manufacturer Part Number GT30J121(Q)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description IGBT 600V 30A 170W TO3PN
Package TO-3P(N)
In Stock 61237 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$1.189 $1.068 $0.875 $0.745 $0.628 $0.597 $0.579
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Test Condition 300V, 30A, 24Ohm, 15V
Td (on/off) @ 25°C 90ns/300ns
Switching Energy 1mJ (on), 800µJ (off)
Supplier Device Package TO-3P(N)
Series -
Power - Max 170 W
Product Attribute Attribute Value
Package / Case TO-3P-3, SC-65-3
Package Tube
Mounting Type Through Hole
Input Type Standard
IGBT Type -
Current - Collector Pulsed (Icm) 60 A
Current - Collector (Ic) (Max) 30 A
Base Product Number GT30J121

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GT30J121(Q) Datasheet PDF