GT30J65MRB,S1E
| Manufacturer Part Number | GT30J65MRB,S1E |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | 650V SILICON N-CHANNEL IGBT, TO- |
| Package | TO-3P(N) |
| In Stock | 89858 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 |
|---|---|---|---|---|---|---|
| $0.9 | $0.809 | $0.65 | $0.534 | $0.443 | $0.412 | $0.397 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Test Condition | 400V, 15A, 56Ohm, 15V |
| Td (on/off) @ 25°C | 75ns/400ns |
| Switching Energy | 1.4mJ (on), 220µJ (off) |
| Supplier Device Package | TO-3P(N) |
| Series | - |
| Reverse Recovery Time (trr) | 200 ns |
| Power - Max | 200 W |
| Product Attribute | Attribute Value |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Package | Tube |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Input Type | Standard |
| IGBT Type | - |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Base Product Number | GT30J65 |
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