GP1M009A090N
| Manufacturer Part Number | GP1M009A090N |
|---|---|
| Manufacturer | Global Power Technologies Group |
| Detailed Description | MOSFET N-CH 900V 9.5A TO3PN |
| Package | TO-3PN |
| In Stock | 5838 pcs |
| Data sheet | GP1M009A090N |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-3PN |
| Series | - |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.75A, 10V |
| Power Dissipation (Max) | 312W (Tc) |
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Other Names | 1560-1174-1 1560-1174-1-ND 1560-1174-5 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 900V |
| Detailed Description | N-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
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