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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M007A090H
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GP1M007A090H

Manufacturer Part Number GP1M007A090H
Manufacturer Global Power Technologies Group
Detailed Description MOSFET N-CH 900V 7A TO220
Package TO-220
In Stock 5381 pcs
Data sheet GP1M007A090(F)H
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V
Power Dissipation (Max) 250W (Tc)
Packaging Tube
Package / Case TO-220-3
Other Names 1560-1165-1
1560-1165-1-ND
1560-1165-5
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1969pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 7A (Tc) 250W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C 7A (Tc)

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GP1M007A090H Datasheet PDF

Data sheet

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