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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M009A070F
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GP1M009A070F

Manufacturer Part Number GP1M009A070F
Manufacturer Global Power Technologies Group
Detailed Description MOSFET N-CH 700V 9A TO220F
Package TO-220F
In Stock 6219 pcs
Data sheet GP1M009A070F, H
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F
Series -
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 4.5A, 10V
Power Dissipation (Max) 52W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1944pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 700V
Detailed Description N-Channel 700V 9A (Tc) 52W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C 9A (Tc)

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GP1M009A070F Datasheet PDF

Data sheet

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