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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123JT-QR
Nexperia USA Inc.

PDTC123JT-QR

Manufacturer Part Number PDTC123JT-QR
Manufacturer Nexperia USA Inc.
Detailed Description PDTC123JT-Q/SOT23/TO-236AB
Package TO-236AB
In Stock 5612247 pcs
Data sheet PDTC123JT-Q
Reference Price (In US Dollars)
3000 6000 15000 30000 75000 150000
$0.012 $0.011 $0.01 $0.009 $0.008 $0.007
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package TO-236AB
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 230 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTC123

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PDTC123JT-QR Datasheet PDF

Data sheet