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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123YS,126
NXP Semiconductors / Freescale

PDTC123YS,126

Manufacturer Part Number PDTC123YS,126
Manufacturer NXP Semiconductors / Freescale
Detailed Description TRANS PREBIAS NPN 500MW TO92-3
Package TO-92-3
In Stock 4556 pcs
Data sheet PDTC123Y Series
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3
Series -
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 500mW
Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Product Attribute Attribute Value
Other Names 934058786126
PDTC123YS AMO
PDTC123YS AMO-ND
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100mA
Base Part Number PDTC123

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PDTC123YS,126 Datasheet PDF

Data sheet

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