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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123EMB,315
NXP Semiconductors

PDTC123EMB,315

Manufacturer Part Number PDTC123EMB,315
Manufacturer NXP Semiconductors
Detailed Description NOW NEXPERIA PDTC123EMB - SMALL
Package DFN1006B-3
In Stock 3866 pcs
Data sheet PDTC123EMB
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package DFN1006B-3
Series -
Resistor - Emitter Base (R2) 2.2 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case 3-XFDFN
Package Bulk
Mounting Type Surface Mount
Frequency - Transition 230 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTC123

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PDTC123EMB,315 Datasheet PDF

Data sheet