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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.5V @ 11mA
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-HSMT (3.2x3)
Series
-
Rds On (Max) @ Id, Vgs
4.5mOhm @ 18A, 4.5V
Power Dissipation (Max)
2W (Ta), 30W (Tc)
Package / Case
8-PowerVDFN
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
4290 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 30A (Tc)
Base Product Number
RQ3E180
Recommended Products
RQ3E180BNTB1NCH 30V 39A MIDDLE POWER MOSFET:Rohm Semiconductor
