RQ3E100BNTB
Reference Price (In US Dollars)
1
10
100
500
1000
$0.174
$0.148
$0.11
$0.087
$0.067
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-HSMT (3.2x3)
Series
-
Rds On (Max) @ Id, Vgs
10.4mOhm @ 10A, 10V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-PowerVDFN
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Base Product Number
RQ3E100
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RQ3E100BNTB Datasheet PDF
Data sheet
Datasheet File Browse
