RQ3C150BCTB
Reference Price (In US Dollars)
1
10
100
500
1000
$0.441
$0.395
$0.308
$0.254
$0.201
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.2V @ 1mA
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-HSMT (3.2x3)
Series
-
Rds On (Max) @ Id, Vgs
6.7mOhm @ 15A, 4.5V
Power Dissipation (Max)
20W (Tc)
Package / Case
8-PowerVDFN
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Base Product Number
RQ3C150
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RQ3C150BCTB Datasheet PDF
Data sheet
Datasheet File Browse