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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.5V @ 2mA
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-263-7
Series
G2R™
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Power Dissipation (Max)
74W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Base Product Number
G2R1000
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