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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5.5V @ 500µA
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-3
Series
G2R™
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Power Dissipation (Max)
44W (Tc)
Package / Case
TO-247-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Base Product Number
G2R1000
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