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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G2R1000MT17D
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G2R1000MT17D

Manufacturer Part Number G2R1000MT17D
Manufacturer GeneSiC Semiconductor
Detailed Description SIC MOSFET N-CH 4A TO247-3
Package TO-247-3
In Stock 30421 pcs
Data sheet G2R1000MT17D
Reference Price (In US Dollars)
1 10 25 100 250 500 1000 2500
$2.11 $1.887 $1.804 $1.686 $1.612 $1.558 $1.506 $1.495
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.5V @ 500µA
Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-3
Series G2R™
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Power Dissipation (Max) 44W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 111 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Base Product Number G2R1000

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G2R1000MT17D Datasheet PDF

Data sheet