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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G2R1000MT17J
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G2R1000MT17J

Manufacturer Part Number G2R1000MT17J
Manufacturer GeneSiC Semiconductor
Detailed Description SIC MOSFET N-CH 3A TO263-7
Package TO-263-7
In Stock 22241 pcs
Data sheet G2R1000MT17J
Reference Price (In US Dollars)
1 10 25 100 250 500 1000
$2.283 $2.044 $1.957 $1.832 $1.753 $1.696 $1.647
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 2mA
Vgs (Max) +20V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-263-7
Series G2R™
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Power Dissipation (Max) 54W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 139 pF @ 1000 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Base Product Number G2R1000

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G2R1000MT17J Datasheet PDF

Data sheet

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