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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123YT-QR
Nexperia USA Inc.

PDTC123YT-QR

Manufacturer Part Number PDTC123YT-QR
Manufacturer Nexperia USA Inc.
Detailed Description PDTC123YT-Q/SOT23/TO-236AB
Package TO-236AB
In Stock 3329045 pcs
Data sheet PDTC123YT-Q
Reference Price (In US Dollars)
1 10 100 500 1000
$0.064 $0.058 $0.032 $0.019 $0.013
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package TO-236AB
Series PDTC123Y
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTC123

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PDTC123YT-QR Datasheet PDF

Data sheet