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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123EE,115
NXP USA Inc.

PDTC123EE,115

Manufacturer Part Number PDTC123EE,115
Manufacturer NXP USA Inc.
Detailed Description TRANS PREBIAS NPN 150MW SC75
Package SC-75
In Stock 4675 pcs
Data sheet PDTC123EM,315 DatasheetMultiple Devices 29/Dec/2014All Dev Label Update 15/Dec/2020NXP USA Inc REACHNXP USA Inc RoHS CertAdvance Notice SOT416 Devices 02/Sep/2014
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package SC-75
Series -
Resistor - Emitter Base (R2) 2.2 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SC-75, SOT-416
Package Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTC123

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PDTC123EE,115 Datasheet PDF

Data sheet

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