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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC115EM,315
NXP Semiconductors

PDTC115EM,315

Manufacturer Part Number PDTC115EM,315
Manufacturer NXP Semiconductors
Detailed Description NOW NEXPERIA PDTC115EM - SMALL S
Package DFN1006-3
In Stock 5313 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package DFN1006-3
Series -
Resistor - Emitter Base (R2) 100 kOhms
Resistor - Base (R1) 100 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case SC-101, SOT-883
Package Bulk
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 20 mA
Base Product Number PDTC115

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PDTC115EM,315 Datasheet PDF