FBG20N18BSH
Manufacturer Part Number
FBG20N18BSH
Manufacturer
EPC Space, LLC
Detailed Description
GAN FET HEMT 200V 18A 4FSMD-B
Package
4-SMD
In Stock
229 pcs
Data sheet
Facility Location Change 20/Jan/2023
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 3mA
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
4-SMD
Series
e-GaN®
Rds On (Max) @ Id, Vgs
28mOhm @ 18A, 5V
Power Dissipation (Max)
-
Package / Case
4-SMD, No Lead
Package
Bulk
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
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FBG20N18BSH Datasheet PDF
Data sheet
Datasheet File Browse
