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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FBG04N08ASH

FBG04N08ASH

Manufacturer Part Number FBG04N08ASH
Manufacturer EPC Space, LLC
Detailed Description GAN FET HEMT 40V 8A 4FSMD-A
Package 4-SMD
In Stock 293 pcs
Data sheet Facility Location Change 20/Jan/2023
Reference Price (In US Dollars)
1 10
$163.04 $158.136
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all EPC Space, LLC series electronic components. We have 293 pieces of EPC Space, LLC FBG04N08ASH in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 2mA
Vgs (Max) +6V, -4V
Technology GaNFET (Gallium Nitride)
Supplier Device Package 4-SMD
Series e-GaN®
Rds On (Max) @ Id, Vgs 24mOhm @ 8A, 5V
Power Dissipation (Max) -
Package / Case 4-SMD, No Lead
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)

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FBG04N08ASH Datasheet PDF

Data sheet