Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.8V @ 1mA
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
4-SMD
Series
e-GaN®
Rds On (Max) @ Id, Vgs
130mOhm @ 4A, 5V
Power Dissipation (Max)
-
Package / Case
4-SMD, No Lead
Package
Bulk
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Recommended Products
FBG04N08ASHGAN FET HEMT 40V 8A 4FSMD-AEPC Space, LLC
