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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC8009ENGR
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EPC8009ENGR

Manufacturer Part Number EPC8009ENGR
Manufacturer EPC
Detailed Description TRANS GAN 65V 4.1A BUMPED DIE
Package
In Stock 4373 pcs
Data sheet EPC8009 Preliminary DatasheeteGaN® FET Brief
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Test 47pF @ 32.5V
Voltage - Breakdown Die
Vgs(th) (Max) @ Id 138 mOhm @ 500mA, 5V
Technology GaNFET (Gallium Nitride)
Series eGaN®
RoHS Status Tray
Rds On (Max) @ Id, Vgs 4.1A (Ta)
Polarization Die
Other Names 917-EPC8009ENGR
EPC8009ENGG
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC8009ENGR
Input Capacitance (Ciss) (Max) @ Vds 0.38nC @ 5V
Gate Charge (Qg) (Max) @ Vgs 2.5V @ 250µA
FET Feature N-Channel
Expanded Description N-Channel 65V 4.1A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss) -
Description TRANS GAN 65V 4.1A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 65V
Capacitance Ratio -

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EPC8009ENGR Datasheet PDF

Data sheet