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EPC8003ENGR
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Voltage - Test
38pF @ 50V
Voltage - Breakdown
Die
Vgs(th) (Max) @ Id
300 mOhm @ 500mA, 5V
Technology
GaNFET (Gallium Nitride)
Series
eGaN®
RoHS Status
Tray
Rds On (Max) @ Id, Vgs
2.5A (Ta)
Polarization
Die
Other Names
917-EPC8003ENGR
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Product Attribute
Attribute Value
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Manufacturer Part Number
EPC8003ENGR
Input Capacitance (Ciss) (Max) @ Vds
0.32nC @ 5V
Gate Charge (Qg) (Max) @ Vgs
2.5V @ 250µA
FET Feature
N-Channel
Expanded Description
N-Channel 100V 2.5A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss)
-
Description
TRANS GAN 100V 2.5A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C
100V
Capacitance Ratio
-
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EPC8003ENGR Datasheet PDF
Data sheet
Datasheet File Browse
