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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC8004ENGR
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EPC8004ENGR

Manufacturer Part Number EPC8004ENGR
Manufacturer EPC
Detailed Description TRANS GAN 40V 4.4A BUMPED DIE
Package
In Stock 5835 pcs
Data sheet EPC8004 Preliminary DatasheeteGaN® FET Brief
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Test 45pF @ 20V
Voltage - Breakdown Die
Vgs(th) (Max) @ Id 125 mOhm @ 500mA, 5V
Technology GaNFET (Gallium Nitride)
Series eGaN®
RoHS Status Tray
Rds On (Max) @ Id, Vgs 4.4A (Ta)
Polarization Die
Other Names 917-EPC8004ENGR
EPC8004ENGA
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC8004ENGR
Input Capacitance (Ciss) (Max) @ Vds 0.36nC @ 5V
Gate Charge (Qg) (Max) @ Vgs 2.5V @ 250µA
FET Feature N-Channel
Expanded Description N-Channel 40V 4.4A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss) -
Description TRANS GAN 40V 4.4A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 40V
Capacitance Ratio -

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EPC8004ENGR Datasheet PDF

Data sheet