EPC2012
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
+6V, -5V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
Die
Series
eGaN®
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
Power Dissipation (Max)
-
Package / Case
Die
Package
Tape & Reel (TR)
Operating Temperature
-40°C ~ 125°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
145 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Base Product Number
EPC20
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Data sheet
Datasheet File Browse
