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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2010CENGR
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EPC2010CENGR

Manufacturer Part Number EPC2010CENGR
Manufacturer EPC
Detailed Description TRANS GAN 200V 22A BUMPED DIE
Package
In Stock 17510 pcs
Data sheet EPC2010C Datasheet
Reference Price (In US Dollars)
2500
$2.431
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Specifications

Product Attribute Attribute Value
Voltage - Test 380pF @ 100V
Voltage - Breakdown Die Outline (7-Solder Bar)
Vgs(th) (Max) @ Id 25 mOhm @ 12A, 5V
Technology GaNFET (Gallium Nitride)
Series eGaN®
RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 22A (Ta)
Polarization Die
Other Names 917-EPC2010CENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2010CENGR
Input Capacitance (Ciss) (Max) @ Vds 3.7nC @ 5V
Gate Charge (Qg) (Max) @ Vgs 2.5V @ 3mA
FET Feature N-Channel
Expanded Description N-Channel 200V 22A (Ta) Surface Mount Die Outline (7-Solder Bar)
Drain to Source Voltage (Vdss) -
Description TRANS GAN 200V 22A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 200V
Capacitance Ratio -

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EPC2010CENGR Datasheet PDF

Data sheet