EPC2010C
Reference Price (In US Dollars)
1
10
100
500
1000
$2.688
$2.415
$1.978
$1.684
$1.42
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 3mA
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
Die
Series
eGaN®
Rds On (Max) @ Id, Vgs
25mOhm @ 12A, 5V
Power Dissipation (Max)
-
Package / Case
Die
Package
Tape & Reel (TR)
Operating Temperature
-40°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Base Product Number
EPC20
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Data sheet
Datasheet File Browse
