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IRFB3207ZPBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
$1.098
$0.985
$0.792
$0.651
$0.539
$0.502
$0.483
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 150µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®
Rds On (Max) @ Id, Vgs
4.1mOhm @ 75A, 10V
Power Dissipation (Max)
300W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Base Product Number
IRFB3207
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IRFB3207ZPBF Datasheet PDF
Data sheet
Datasheet File Browse
