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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB17N20D
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IRFB17N20D

Manufacturer Part Number IRFB17N20D
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 200V 16A TO220AB
Package TO-220AB
In Stock 3902 pcs
Data sheet IRF(B,S,SL)17N20DIR Part Numbering SystemEOL122B 02/Oct/2007
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)

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IRFB17N20D Datasheet PDF

Data sheet

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