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IRF5810TR
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.2V @ 250µA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
6-TSOP
Series
HEXFET®
Rds On (Max) @ Id, Vgs
90mOhm @ 2.9A, 4.5V
Power - Max
960mW
Package / Case
SOT-23-6 Thin, TSOT-23-6
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs
9.6nC @ 4.5V
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A
Configuration
2 P-Channel (Dual)
Base Product Number
IRF58
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Data sheet
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