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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF5803D2PBF
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IRF5803D2PBF

Manufacturer Part Number IRF5803D2PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET P-CH 40V 3.4A 8SO
Package 8-SO
In Stock 3852 pcs
Data sheet IR Part Numbering SystemMultiple Devices 19/Jun/2012IRF5803D2PbF
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series FETKY™
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V
Power Dissipation (Max) 2W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
FET Type P-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)

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IRF5803D2PBF Datasheet PDF

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