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IRF5806
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.2V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
Micro6™(TSOP-6)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
86mOhm @ 4A, 4.5V
Power Dissipation (Max)
2W (Ta)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
594 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 4.5 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
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Data sheet
Datasheet File Browse