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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF3717PBF
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IRF3717PBF

Manufacturer Part Number IRF3717PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 20V 20A 8SO
Package 8-SO
In Stock 6191 pcs
Data sheet IRF3717PbFMult Dev Tube Pkg Std 27/Dec/2018Backend Wafer Transfer 23/Oct/2013IR Part Numbering SystemPackage Drawing Update 19/Aug/2015Mult Dev Tube Pkg Disc 12/Jun/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.45V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series HEXFET®
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)

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IRF3717PBF Datasheet PDF

Data sheet