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IRF40R207
Reference Price (In US Dollars)
1
10
100
500
1000
$0.371
$0.328
$0.251
$0.199
$0.159
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.9V @ 50µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO252-3
Series
HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs
5.1mOhm @ 55A, 10V
Power Dissipation (Max)
83W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Base Product Number
IRF40R207
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Data sheet
Datasheet File Browse